Banerjee, S. ; Sanyal, M. K. ; Datta, A. ; Kanakaraju, S. ; Mohan, S. (1996) X-ray-reflectivity study of Ge-Si-Ge films Physical Review B: Condensed Matter and Materials Physics, 54 (23). pp. 16377-16380. ISSN 1098-0121
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Official URL: http://prb.aps.org/abstract/PRB/v54/i23/p16377_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.54.16377
Abstract
Here we report on an X-ray specular reflectivity study of Ge-Si-Ge trilayers grown on Si(001) single-crystal substrate by ion beam sputtering deposition at various substrate temperatures. The electron-density profile of the trilayer as a function of depth, obtained from X-ray-reflectivity data, reveals an intermixing of Si and Ge. The X-ray-reflectivity data have been analyzed using a scheme based on the distorted-wave Born approximation, and the validity of the analysis scheme was checked using simulated data. Analyzed results provided information regarding interdiffusion in this system. We notice that although the Si-on-Ge interface is sharp, a Si0.4Ge0.6 alloy is formed at the Ge-on-Si interface.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 61334 |
| Deposited On: | 15 Sep 2011 03:43 |
| Last Modified: | 15 Sep 2011 03:43 |
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