Lakshmi, S. ; Pati, Swapan K. (2004) Effect of electron-phonon coupling on the conductance of a one-dimensional molecular wire The Journal of Chemical Physics, 121 (23). pp. 11998-12004. ISSN 0021-9606
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Official URL: http://link.aip.org/link/doi/10.1063/1.1817857
Related URL: http://dx.doi.org/10.1063/1.1817857
Abstract
The effect of inelastic scattering, particularly that of the electron-phonon interactions, on the current-voltage characteristics of a one-dimensional tight-binding molecular wire has been investigated. The wire has been modeled using the Su-Schreiffer-Heeger Hamiltonian and we compute the current using the Landauer's scattering formalism. Our calculations show that the presence of strong electron-lattice coupling in the wire can induce regions of negative differential resistance (NDR) in the I-V curves. The reasons for this can be traced back to the quasidegeneracy in few of the low-energy molecular levels in the presence of electron-phonon coupling and an external applied bias. The molecular levels become highly delocalized at the critical bias at which the NDR is seen, corresponding to the vanishing of the electron-phonon coupling with equal bond lengths.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
Keywords: | Electron-phonon Interactions; One-dimensional Conductivity; Negative Resistance; Localised States |
ID Code: | 60790 |
Deposited On: | 12 Sep 2011 07:07 |
Last Modified: | 12 Sep 2011 07:07 |
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