Studies of charge transfer processes across donor-acceptor interface using a field effect transistor geometry

Rao, Manohar ; Narayan, K. S. (2009) Studies of charge transfer processes across donor-acceptor interface using a field effect transistor geometry Applied Physics Letters, 95 (18). 183306_1-183306_3. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v95/i18/p1833...

Related URL: http://dx.doi.org/10.1063/1.3259629

Abstract

The existence of donor- type polymer field effect transistors (FETs), which are FETs exhibiting p- type characteristics and acceptor- type molecular FETs with n- type characteristics, provide an interesting possibility of a combined active bilayer system, especially under photoexcitation. We present a device structure and methodology that is conducive to study donor- acceptor interfacial processes using a FET platform. The changes in FET characteristics initiated by the photogenerated carriers in the donor coated acceptor device are studied using steady state and pulsed photoexcitation.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Organic Field Effect Transistors; Organic Semiconductors; Photoexcitation
ID Code:60065
Deposited On:08 Sep 2011 10:09
Last Modified:08 Sep 2011 10:09

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