Chawla, Jasmeet S. ; Gupta, Dhritiman ; Narayan, K. S. ; Zhang, R. (2007) Semiconducting polymer coated single wall nanotube field-effect transistors discriminate holes from electrons Applied Physics Letters, 91 (4). 043510_1-043510_3. ISSN 0003-6951
Full text not available from this repository.
Official URL: http://apl.aip.org/resource/1/applab/v91/i4/p04351...
Related URL: http://dx.doi.org/10.1063/1.2763961
Abstract
Single wall carbon nanotube (SWNT) based field effect transistors (FET) coated with semiconducting polymers respond to photoexcitation revealing characteristic features which depend on the electronic structure of the polymer. The authors observe a decrease in the drain source current of the SWNTFET in the accumulation mode in an environment of acceptor type polymer network, and a significant increase in the current in the depletion mode for a donor type polymer network around the nanotube.
Item Type: | Article |
---|---|
Source: | Copyright of this article belongs to American Institute of Physics. |
Keywords: | Band Structure; Carbon Nanotubes; Electric Current; Field Effect Transistors; Organic Semiconductors; Photoexcitation |
ID Code: | 60044 |
Deposited On: | 08 Sep 2011 10:08 |
Last Modified: | 08 Sep 2011 10:08 |
Repository Staff Only: item control page