Control of single-wall-nanotube field-effect transistors via indirect long-range optically induced processes

Abstract

We observe significant changes in the response of single-wall-carbon-nanotube-based field-effect transistors upon photoexcitation in the presence of optically active conjugated polymer network. The primary features observed are in the form of an increase in the current in the depletion mode upon photoexcitation. Pulsed measurements indicate that the transistor enters the depleted state prior to the rise in current brought about by the transfer of the photogenerated carriers from the semiconducting polymer to the nanotube under depletion bias.