Nonexponential relaxation of photoinduced conductance in organic field effect transistors

Dutta, Soumya ; Narayan, K. S. (2003) Nonexponential relaxation of photoinduced conductance in organic field effect transistors Physical Review B: Condensed Matter and Materials Physics, 68 (12). 125208_1-125208_4. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v68/i12/e125208

Related URL: http://dx.doi.org/10.1103/PhysRevB.68.125208

Abstract

We report detailed studies of the slow relaxation of the photoinduced excess charge carriers in organic metal-insulator-semiconductor field effect transistors consisting of poly(3-hexylthiophene) as the active layer. The relaxation process cannot be physically explained by processes, which lead to a simple or a stretched-exponential decay behavior. Models based on serial relaxation dynamics due to a hierarchy of systems with increasing spatial separation of the photo-generated negative and positive charges are used to explain the results. In order to explain the observed trend, the model is further modified by introducing a gate voltage dependent coulombic distribution manifested by the trapped negative charge carriers.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:60020
Deposited On:08 Sep 2011 10:05
Last Modified:18 May 2016 10:21

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