Bose, D. N. ; Ramprakash, Y. ; Basu, S. (1989) Characterization of n-InP surfaces before and after surface modification Materials Letters, 8 (9). pp. 364-368. ISSN 0167-577X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/016757...
Related URL: http://dx.doi.org/10.1016/0167-577X(89)90009-8
Abstract
Modification of n-InP photoelectrode surfaces by matte etching followed by RuCl3 treatment has been shown to enhance the performance and stability of PEC solar cells. The unmodified and modified surfaces have been examined by SIMS, Auger and Raman spectroscopy. These experiments indicate the formation of a thin oxide layer due to modification which results in reduced sub-band gap response and increased Schottky barrier height.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Materials Research Society. |
| ID Code: | 5879 |
| Deposited On: | 19 Oct 2010 10:23 |
| Last Modified: | 20 May 2011 10:41 |
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