Bose, D. N. ; Paul, T. K. (1990) Dielectric films on semiconductors: fluorides on indium phosphide Ferroelectrics, 102 (1). pp. 397-405. ISSN 0015-0193
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Official URL: http://www.informaworld.com/smpp/content~db=all~co...
Related URL: http://dx.doi.org/10.1080/00150199008221501
Abstract
Recent advances in InP MISFET technology are highlighted in this paper. It is shown that significant improvement in electrical properties of InP Schottky diodes as well as MIS structures can be achieved through chemical treatment of semiconductor surfaces. This is illustrated with reference to HF and sulphide treatment of InP Schottky diodes. MIS structures with prior HF treatment showed a density of interface state as low as 2 × 1010cm-2eV-1 using Ba0.17Sr0.83F2 gate dielectric. The interface properties are explained from the point of view of chemical bonding in the light of Auger and SEM analysis.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Taylor and Francis Ltd. |
| ID Code: | 5818 |
| Deposited On: | 19 Oct 2010 10:50 |
| Last Modified: | 20 May 2011 05:57 |
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