Bhattacharya, P. ; Banerjee, A. ; Chatterjee, A. P. ; Bose, D. N. (1990) Laser annealing of phosphorus-implanted CdTe Materials Science and Engineering: B, 5 (4). L1-L3. ISSN 0921-5107
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/092151...
Related URL: http://dx.doi.org/10.1016/0921-5107(90)90139-3
Abstract
Single crystals of p-CdTe were implanted with phosphorus ions (100 keV, fluence of 1014 ions cm-2). Pulsed ruby laser annealing was carried out at energy densities of 1.9-3.2 J cm-2 and compared with thermal annealing for 1 h at 300° C. Resistivity measurements showed that laser annealing produced significantly lower resistivity than thermal annealing, the lowest resistivity of 1.95 Ω cm being obtained at 1.9 J cm-2. Scanning electron micrographs showed better morphology with laser annealing.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 5814 |
| Deposited On: | 19 Oct 2010 10:51 |
| Last Modified: | 20 May 2011 05:53 |
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