Bendapudi, Seishu ; Bose, D. N. (1990) Photoluminescence and heavy doping effects in InP Bulletin of Materials Science, 13 (1-2). pp. 75-82. ISSN 0250-4707
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Official URL: http://www.ias.ac.in/j_archive/bms/13/1/75-82/view...
Related URL: http://dx.doi.org/10.1007/BF02744860
Abstract
Photoluminescence (PL) studies on LPE-grown InP layers doped with selenium and having carrier concentrations from 1 × 1018 to 1 × 1020 cm-3 have been reported in this paper. Measurements at 300 and 77 K showed that the band to band recombination peak energy shifts to values as high as 1.7 eV with increasing doping, the increase being sharp beyond 4 × 1019 cm-3. These results have been explained as being the result of the Burstein shift and the band-gap shrinkage.
| Item Type: | Article |
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| Source: | Copyright of this article belongs to Indian Academy of Sciences. |
| Keywords: | Photoluminescence; Heavy Doping Effects; Burstein Shift; Band-gap Shrinkage |
| ID Code: | 5789 |
| Deposited On: | 19 Oct 2010 10:56 |
| Last Modified: | 16 May 2016 16:14 |
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