Basu, S. ; Roy, J. N. ; Bose, D. N. (1989) Characterization of grain boundary in polycrystalline n-InP grown by the gradient freeze method Materials Letters, 7 (9-10). pp. 359-362. ISSN 0167-577X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/016757...
Related URL: http://dx.doi.org/10.1016/0167-577X(89)90026-8
Abstract
The study of an isolated grain boundary in n-InP has been carried out using I-V, C-V and photocapacitance measurements. The barrier height determined from the I-V characteristic was found to be 0.412 eV. While the thermal activation energy for conduction across the boundary gave a value of φ B = 0.438 eV the I/C2 versus V plot which was linear showed φ B = 0.421 eV. Study of the variation of grain boundary capacitance with different photon flux densities gave the grain-boundary density of states as 6.35 × 1011cm-2.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Materials Research Society. |
| ID Code: | 5787 |
| Deposited On: | 19 Oct 2010 10:57 |
| Last Modified: | 20 May 2011 10:41 |
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