Ali, S. T. ; Bose, D. N. (1991) Improved Au/n-GaAs schottky barriers due to Ru surface modification Materials Letters, 12 (5). pp. 388-393. ISSN 0167-577X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/016757...
Related URL: http://dx.doi.org/10.1016/0167-577X(91)90122-M
Abstract
Au/n-GaAs Schottky diodes were studied before and after Ru surface modification and characterised by current-voltage (I-V) measurements between 108 and 358 K. An increase in barrier height (φ Bn) from 0.80 to 0.92 V, decrease in ideality factor (n) from 1.34 to 1.16 and in reverse saturation current density (J0) from 2.1 × 10-8 to 1.57 × 10-10 A cm-2 were observed. The values of the effective Richardson constant were also evaluated. Capacitance-voltage (C-V) studies at 303 K showed larger values of φ Bn, reasons for which are discussed. The effect of Ru modification on the surface of GaAs is considered on the basis of these observations.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Materials Research Society. |
| ID Code: | 5763 |
| Deposited On: | 19 Oct 2010 11:06 |
| Last Modified: | 20 May 2011 05:50 |
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