Bose, D. N. ; De Purkayastha, S. (1981) Dielectric and photoconducting properties of Ga2Te3 and In2Te3 crystals Materials Research Bulletin, 16 (6). pp. 635-642. ISSN 0025-5408
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/002554...
Related URL: http://dx.doi.org/10.1016/0025-5408(81)90262-2
Abstract
Single crystals of defect III-VI semiconductors Ga2Te3 and In2Te3 have been grown by the Bridgman method. Capacitance vs frequency measurements have been carried out from which the low frequency dielectric constants ε 5 have been determined to be 10.95 ± 0.26 and 12.3 ± 0.13 respectively. These values are compared with the high-frequency dielectric constants ε60 calculated from the Phillips' model. Dark conductivity and photoconductivity have been studied as a function of annealing upto 210° C, maxinum photosensitivity being obtained for both crystals for Tanneal = 80° C. This behaviour has been related to lattice ordering through x-ray diffraction studies. Measurements of photo conductive gain indicate carrier life-times of 2 × 10-4s and 5 × 10-4s respectively at room-temperature.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 5731 |
| Deposited On: | 19 Oct 2010 11:17 |
| Last Modified: | 23 May 2011 04:30 |
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