Pal, S. ; Ray, S. K. ; Lahiri, S. ; Bose, D. N. (2000) Ga2O3(Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices Electronics Letters, 36 (24). pp. 2044-2046. ISSN 0013-5194
Full text not available from this repository.
Official URL: http://scitation.aip.org/getabs/servlet/GetabsServ...
Related URL: http://dx.doi.org/10.1049/el:20001410
Abstract
Dielectric films from gadolinium gallium garnet single crystal were deposited by electron-beam evaporation on strained Si1-xGex/Si layers at 300 K to form high-k metal-insulator-semiconductor (MIS) structures. The p-Si0.74Ge0.26/Ga2O3(Gd2O3) interface properties were studied through C-V and G-V measurements of the MIS capacitors, which showed encouraging electrical characteristics with oxide k = 12.3 and minimum interface state density Dit of 4.8 × 1011 cm-2eV-1.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The Institution of Electrical Engineers. |
| ID Code: | 5709 |
| Deposited On: | 19 Oct 2010 11:26 |
| Last Modified: | 19 May 2011 11:56 |
Repository Staff Only: item control page
