Pal, D. ; Bose, D. N. (1995) Deep level transient spectroscopy study in gettered liquid phase epitaxy grown In0.53Ga0.47As Journal of Applied Physics, 77 (1). pp. 210-212. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v77/i1/p210_s...
Related URL: http://dx.doi.org/10.1063/1.359371
Abstract
Deep-level transient spectroscopy has been carried out using Schottky diodes fabricated on n-In0.53Ga0.47As grown by liquid phase epitaxy (LPE). A defect level corresponding to oxygen having an activation energy Ec - 0.32 eV and capture cross section 7 × 10 -17 cm2 was observed. Depth profiling of shallow donors and oxygen showed that concentrations of both these impurities increased towards the surface of the epilayers. Dy gettering during LPE growth significantly reduced the oxygen concentration and also resulted in lower etch pit density.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 5708 |
| Deposited On: | 19 Oct 2010 11:26 |
| Last Modified: | 20 May 2011 05:45 |
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