Mandal, K. C. ; Basu, S. ; Bose, D. N. (1987) Correlation of fermi level shift with photovoltages at ruthenium-modified CdTe surfaces Journal of Solid State Chemistry, 71 (2). pp. 559-561. ISSN 0022-4596
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Official URL: http://dx.doi.org//10.1016/0022-4596(87)90266-0
Related URL: http://dx.doi.org/10.1016/0022-4596(87)90266-0
Abstract
The effect of ruthenium surface modification is shown to considerably improve the properties of CdTe-based photoelectrochemical (PEC) solar cells. Contact potential difference (CPD) measurements on n-and p-CdTe show shifts in surface Fermi level in opposite directions corresponding to an increase in barrier height in each case. The magnitudes of the changes in CPD are approximately equal to the increase of open-circuit voltage, Voc , observed in photoelectrochemical cells.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 5699 |
| Deposited On: | 19 Oct 2010 11:28 |
| Last Modified: | 20 May 2011 10:43 |
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