Bose, D. N. ; Hedge, M. S. ; Basu, S. ; Mandal , K. C. (1989) XPS investigation of CdTe surfaces: effect of Ru modification Semiconductor Science and Technology, 4 (10). p. 866. ISSN 0268-1242
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Official URL: http://iopscience.iop.org/0268-1242/4/10/006
Related URL: http://dx.doi.org/10.1088/0268-1242/4/10/006
Abstract
The composition of n- and p-type CdTe surfaces before and after chemical modification by Ru have been examined using X-ray photoelectron spectroscopy (XPS). While the chemically etched unmodified surfaces were found to be covered by a thin layer of oxide due to ambient oxidation of a Te layer, Ru-modified surfaces were found to have a thicker oxide layer of composition TeOx where x=1.97 and 2.07 for p- and n-CdTe respectively. The Cd:Te ratios of the surfaces were determined from the peak intensities and showed depletion of Cd due to modification. These results can be related to the increase in band-bending at the surface due to Ru modification and the increase in minority carrier diffusion lengths on both p- and n-CdTe.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 5684 |
| Deposited On: | 19 Oct 2010 11:31 |
| Last Modified: | 20 May 2011 10:42 |
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