Spin-polarized electron tunneling in polycrystalline Sr2FeMoO6 thin films

Muduli, P. K. ; Budhani, R. C. ; Topwal, D. ; Sarma, D. D. (2009) Spin-polarized electron tunneling in polycrystalline Sr2FeMoO6 thin films Journal of Physics: Conference Series, 150 (4). 042132-042132. ISSN 1742-6588

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Official URL: http://iopscience.iop.org/1742-6596/150/4/042132

Related URL: http://dx.doi.org/10.1088/1742-6596/150/4/042132

Abstract

We report a comparative study of magnetotransport in high quality epitaxial and polycrystalline thin films of Sr2FeMoO6 deposited on single crystal substrates of SrTiO3 (STO) and Yttria-stabilized zirconia (YSZ) respectively. The polycrystallinity of the films on YSZ affects their magnetotransport significantly. The resistivity ρ(T) of such films is thermally activated in contrast to metallic behavior of ρ(T) of the thin films on STO. A large ( ≈13 %) low-field magnetoresistance (MR) at 10 K is seen in the polycrystalline samples compared to the negligibly small MR ( ≈2.5 %)of their epitaxial counterparts. A detail analysis of the temperature and magnetic-field-dependent resistivity and magnetization provide strong evidence for tunneling of spin-polarized carriers through a magnetic intergranular material of insulating ground state.

Item Type:Article
Source:Copyright of this article belongs to Institute of Physics Publishing.
ID Code:5679
Deposited On:19 Oct 2010 11:32
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