Bendapudi, Seishu ; Bose, D. N. (1983) Effect of high doping on the photoluminescence edge of GaAs and InP Applied Physics Letters, 42 (03). pp. 287-289. ISSN 0003-6951
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Official URL: http://apl.aip.org/applab/v42/i3/p287_s1?isAuthori...
Related URL: http://dx.doi.org/10.1063/1.93882
Abstract
A theoretical method for calculating the variation of optical transition energy Eg,opt in semiconductors with heavy n doping is presented. The calculations based on the Moss-Burstein shift and band-gap shrinkage take into account both exchange and Coulomb interactions, the latter being calculated for nonparabolic bands. A comparison with the experimental values of Eg,opt for heavily n-doped GaAs and InP shows good agreement over wide ranges of temperature and doping and can satisfactorily explain photoluminescent emission at energies up to 1.65 eV in GaAs (1.8° K) and 1.91 eV in InP (300°K).
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 5654 |
| Deposited On: | 19 Oct 2010 11:37 |
| Last Modified: | 23 May 2011 04:27 |
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