Ghosh, S. ; Bose, D. N. (1940) Plasma-enhanced chemical vapour deposited silicon-nitride films for interface studies Journal of Materials Science: Materials in Electronics, 5 (4). pp. 193-198. ISSN 0957-4522
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Official URL: http://www.springerlink.com/content/h536045233783w...
Related URL: http://dx.doi.org/10.1007/BF00186184
Abstract
Silicon nitride (SiN x) films of varying stoichiometry (x=1.04, 1.39 and 1.63) were deposited on silicon substrates at 250 C by plasma-enhanced chemical vapour deposition (PECVD). The N/Si ratios were determined by electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering (RBS) measurements. Optical, electrical and interface characterization were carried out for the films. It was observed that nitrogen-rich films (x=1.63) gave the best electrical properties and the lowest interface state density, which was 1.1 × 1011 eV-1 cm-2. The resistivity and breakdown field of these films were 5.1 × 1013Ωcm and 1.5 × 106 V cm-1, respectively.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Springer-Verlag. |
| ID Code: | 5652 |
| Deposited On: | 19 Oct 2010 11:38 |
| Last Modified: | 23 May 2011 04:39 |
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