Bose, M. ; Basa, D. K. ; Bose, D. N. (2000) Study of nitrous oxide plasma oxidation of silicon nitride thin films Applied Surface Science, 158 (3-4). pp. 275-280. ISSN 0169-4332
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01694...
Related URL: http://dx.doi.org/10.1016/S0169-4332(00)00023-4
Abstract
A novel oxidation process for silicon nitride films of various compositions have been undertaken utilizing nitrous oxide (N2O) plasma. Careful studies using elastic backscattering (EBS) technique to determine the composition and capacitance-voltage (C-V) measurements to determine the insulator charge density (Qo) and the interface state density (Dit) have been made on the films before and after N2O plasma oxidation. The incorporation of oxygen into the silicon nitride films of various compositions due to the N2O plasma treatment is confirmed. The insulator charge density (Qo) as well as the minimum interface state density (Dit)min are observed to be more for the N2O oxidized samples compared with the corresponding virgin samples.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Plasma Oxidation; Elastic Backscattering; C-v Measurement; Insulator Charge Density; Interface State Density; PECVD |
| ID Code: | 5642 |
| Deposited On: | 19 Oct 2010 11:40 |
| Last Modified: | 19 May 2011 11:57 |
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