Pal, S. ; Mahapatra, R. ; Ray, S. K. ; Chakraborty, B. R. ; Shivaprasad, S. M. ; Lahiri, S. K. ; Bose, D. N. (2003) Microwave plasma oxidation of gallium nitride Thin Solid Films, 425 (1-2). pp. 20-23. ISSN 0040-6090
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00406...
Related URL: http://dx.doi.org/10.1016/S0040-6090(02)01055-6
Abstract
Low temperature oxidation of gallium nitride epilayer by microwave oxygen plasma treatment has been characterized by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy (XPS). In the initial stage the oxide layer grows almost linearly with time while after approximately a thickness of 10 nm the growth rate saturates. The chemical shift of 1.2 eV in the Ga 2p and 3d peak in XPS data is observed upon oxidation, indicating the formation of Ga2O3 on the GaN surface.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Oxidation; Plasma Processing and Deposition; Nitrides; Secondary Ion Mass Spectrometry; X-ray Photoelectron Spectroscopy |
| ID Code: | 5633 |
| Deposited On: | 19 Oct 2010 11:42 |
| Last Modified: | 19 May 2011 11:51 |
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