Bose, M. ; Bose, D. N. ; Basa, D. K. (2002) Plasma enhanced growth, composition and refractive index of silicon oxynitride films Materials Letters, 52 (06). pp. 417-422. ISSN 0167-577X
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01675...
Related URL: http://dx.doi.org/10.1016/S0167-577X(01)00436-0
Abstract
Silicon oxynitride films of various compositions have been prepared by the glow discharge decomposition of silane (SiH4) and nitrous oxide (N2O). The refractive index of the films has been measured using ellipsometry, while the composition of the films has been determined using Rutherford backscattering (RBS) and elastic backscattering (EBS) techniques. This study has demonstrated that the measurement of composition using EBS technique is distinctly superior to RBS technique, particularly for the films like silicon oxynitride containing multicomponent light elements in low concentration.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Materials Research Society. |
| Keywords: | Silicon Oxynitride; Elastic Backscattering (EBS); Rutherford Backscattering (RBS); Plasma-enhanced Chemical Vapor Deposition (PECVD); Refractive Index |
| ID Code: | 5627 |
| Deposited On: | 19 Oct 2010 11:43 |
| Last Modified: | 19 May 2011 11:52 |
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