Budhani, R. C. ; Bunshah, R. F. ; Flinn, P. A. (1988) Kinetics of structural relaxation and hydrogen evolution from plasma deposited silicon nitride Applied Physics Letters, 52 (4). pp. 284-286. ISSN 0003-6951
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Official URL: http://apl.aip.org/applab/v52/i4/p284_s1?isAuthori...
Related URL: http://dx.doi.org/10.1063/1.99495
Abstract
Infrared absorption measurements and the temperature dependence of stress have been used to establish the kinetics of structural relaxation and hydrogen evolution from plasma deposited a-SixNy :H films. The Arrhenius rate law describes the dissociation of N-H and Si-H bonds which occurs on annealing the films above 600 °C. The activation energies deduced from the infrared data are lower than the respective bond dissociation energies. The films undergo a rapid stress relaxation in the temperature range 400-650 °C. The discussion of the experimental results highlights possible mechanisms for the evolution of hydrogen from a-SixNy@B:H networks.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
Keywords: | Silicon Nitrides; Stress Relaxation; Dissociation; Infrared Radiation; Stresses; Kinetics; Very High Temperature; Activation Energy; Light Transmission; Plasma; Infrared Spectra; Absorption Spectra; Crystal Structure |
ID Code: | 5618 |
Deposited On: | 19 Oct 2010 11:44 |
Last Modified: | 23 May 2011 07:32 |
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