Broerman, J. G. ; Liu, L. ; Pathak, K. N. (1971) Effect of p⅔ intraband polarization on the mobility of zero-gap semiconductors Physical Review B: Condensed Matter and Materials Physics, 4 (2). pp. 664-667. ISSN 1098-0121
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Official URL: http://prb.aps.org/abstract/PRB/v4/i2/p664_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.4.664
Abstract
It is shown that in doped zero-gap semiconductors like α-Sn, the intraband part of the static screening function is considerably decreased from that of free electrons at large momentum transfer by the p-like character of the conduction-band wave function. However, it is also shown that this large screening loss produces a relatively small change in the ionized-impurity-limited mobility.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 55994 |
| Deposited On: | 22 Aug 2011 12:52 |
| Last Modified: | 22 Aug 2011 12:52 |
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