Johnson, Mats ; Srinivasan, G. (1978) The MOSFET inversion layer: the conductivity of a localized, highly correlated phase Physica Scripta, 18 (6). pp. 476-480. ISSN 0031-8949
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Official URL: http://iopscience.iop.org/1402-4896/18/6/026
Related URL: http://dx.doi.org/10.1088/0031-8949/18/6/026
Abstract
We propose that the electrons in the localized regime (close to the threshold for metallic conduction) form a highly correlated electron liquid and discuss the a.c.-conductivity of such a liquid. In particular we discuss the d.c.-limit in a Wigner lattice phase. We find that defect migration contributes a term of the form σ = σi exp (-W/kBT) where σi is density dependent in qualitative agreement with experiments on devices with little disorder.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Royal Swedish Academy of Sciences. |
| ID Code: | 55556 |
| Deposited On: | 18 Aug 2011 11:31 |
| Last Modified: | 18 Aug 2011 11:31 |
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