Vasu, K. S. ; Sampath, S. ; Sood, A. K. (2011) Nonvolatile unipolar resistive switching in ultrathin films of graphene and carbon nanotubes Solid State Communications, 151 (16). pp. 1084-1087. ISSN 0038-1098
Full text not available from this repository.
Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.ssc.2011.05.018
Abstract
We report unipolar resistive switching in ultrathin films of chemically produced graphene (reduced graphene oxide) and multiwalled carbon nanotubes. The two-terminal devices with yield >99% are made at room temperature by forming continuous films of graphene of thickness ~20 nm on indium tin oxide coated glass electrode, followed by metal (Au or Al) deposition on the film. These memory devices are nonvolatile, rewritable with ON/OFF ratios up to ~105 and switching times up to 10 μs. The devices made of MWNT films are rewritable with ON/OFF ratios up to ~400. The resistive switching mechanism is proposed to be nanogap formation and filamentary conduction paths.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Graphene; A. Nanotubes; A. Reduced Graphene Oxide; D. Resistive Switching |
| ID Code: | 54814 |
| Deposited On: | 12 Aug 2011 12:53 |
| Last Modified: | 13 Jul 2012 09:14 |
Repository Staff Only: item control page
