Kulkarni, Sneha A. ; Mirji, S. A. ; Mandale, A. B. ; Gupta, R. P. ; Vijayamohanan, Kunjukrishna P. (2005) Growth kinetics and thermodynamic stability of octadecyltrichlorosilane self-assembled monolayer on Si(100) substrate Materials Letters, 59 (29-30). pp. 3890-3895. ISSN 0167-577X
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.matlet.2005.07.026
Abstract
We have studied the growth kinetics and thermodynamic stability of octadecyltrichlorosilane (OTS) self-assembled monolayers on Si (100) substrate in order to understand its role in controlling the adhesion and surface hydrophobicity. Time-dependent contact angle measurements, using water as a function of OTS concentration, show rapid monolayer formation in the initial stage followed by a slow attainment of full coverage and the overall kinetics approximately follows the Langmuir adsorption isotherm. The adsorption rate constant (ka=150 M −1 s −1) is found to be significantly greater than the desorption rate constant (kd=0.156 s −1) while the Gibbs free energy (Δ Gads) change amounts to -4.2 kcal/mol suggesting thermodynamic stability of OTS monolayer on a silicon surface. Partial monolayer formation by a 'uniform' growth mechanism, even at low coverage, is revealed by atomic force microscopy (AFM) in conjunction with grazing angle FTIR spectroscopy. Analysis of the interfacial adhesion properties using Zisman plot suggests a critical surface tension (γ c) of 20.7 dyn/cm for OTS monolayer on Si (100) surface.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Self-assembled Monolayers (SAMs); Gibbs's Free Energy (ΔG); Growth Kinetics; Zisman Plot; Octadecyltrichlorosilane (OTS) |
ID Code: | 53271 |
Deposited On: | 05 Aug 2011 11:19 |
Last Modified: | 05 Aug 2011 11:19 |
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