Abhaya, S. ; Amarendra, G. ; Kalavathi, S. ; Gopalan, Padma ; Kamruddin, M. ; Tyagi, A. K. ; Sastry, V. S. ; Sundar, C. S. (2007) Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy Applied Surface Science, 253 (8). pp. 3799-3802. ISSN 0169-4332
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.apsusc.2006.07.091
Abstract
Silicide formation induced by thermal annealing in Ni/Si thin film system has been investigated using glancing incidence X-ray diffraction (GIXRD) and Auger electron spectroscopy (AES). Silicide formation takes place at 870 K with Ni2Si, NiSi and NiSi2 phases co-existing with Ni. Complete conversion of intermediate silicide phases to the final NiSi2 phase takes place at 1170 K. Atomic force microscopy measurements have revealed the coalescence of pillar-like structures to ridge-like structures upon silicidation. A comparison of the experimental results in terms of the evolution of various silicide phases is presented.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Nickel Silicides; X-ray Diffraction; Auger Electron Spectroscopy |
| ID Code: | 53262 |
| Deposited On: | 05 Aug 2011 10:38 |
| Last Modified: | 05 Aug 2011 10:38 |
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