Manivannan, A. ; Fujishima, A. ; Aravamudan, G. ; Subba Rao, G. V. (1990) Crystal growth and photoelectrochemical characterization of Cd4BSe6 (B=Si or Ge) Berichte der Bunsengesellschaft für physikalische Chemie, 94 (1). pp. 8-12. ISSN 0005-9021
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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/bbpc.19...
Related URL: http://dx.doi.org/10.1002/bbpc.19900940103
Abstract
Single crystals of Cd4BSe6 (B=Si, Ge) (ARGYRODITES) were grown by CVT method using a three zone furnace. As-grown crystals were of n-type and they have been characterized by photoelectrochemical (PEC) measurements in aqueous electrolytes. The current-potential curves, Mott-Schottky plots and action spectra were examined. From the analysis of spectral response measurements the band gaps (indirect) for Cd4SiSe6 and Cd4GeSe6 were found to be 1.68 and 1.5 eV, respectively. The opencircuit photopotentials for these semiconductor electrodes were as high as 1.1 V vs. SCE in some of the electrolytes used.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to John Wiley and Sons. |
| Keywords: | Crystal Growth; Electrochemistry; Interfaces; Photoelectrochemistry; Semiconductors |
| ID Code: | 52631 |
| Deposited On: | 23 Nov 2011 05:24 |
| Last Modified: | 23 Nov 2011 05:24 |
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