Zeeman effect of electronic Raman lines of acceptors in elemental semiconductors: Boron in blue diamond

Abstract

The Zeeman effect of the electronic Raman transition from 1s(p_3/2):Γ₈ to the 1s(p_½ ):Γ₇ spin-orbit partner (Δ ) of boron acceptors in diamond is studied with magnetic field B along [001], [111], or [110]. As many as eight Zeeman components of Δ and, in addition, four Raman lines ascribed to transitions between the Zeeman sublevels of Γ₈ [Raman-electron-paramagnetic-resonance (Raman-EPR) transitions] are observed with the polarizations expected from the polarizability tensors that characterize them. These tensors are formulated in terms of γ ₁,γ ₂, and γ ₃, the Luttinger parameters characterizing the p_3/2 and p_½ valence band maxima. The selection rules and relative intensities of the Zeeman components and of the Raman-EPR lines, observed in diverse polarization configurations and scattering geometries, have led to determination of (1) the assignments of magnetic quantum numbers; (2) the level ordering of the Zeeman sublevels, or, equivalently, the magnitudes and signs of g₁ and g₂, the orbital and spin g factors of the acceptor-bound hole; (3) the extreme mass anisotropy as reflected in the ratio (γ ₂/γ ₃)=0.08± 0.01. Magnetic-field-induced mixing of zero field states, time reversal symmetry, and the diamagnetic contributions that characterize the different sublevels are fully taken into account in the interpretation of the experimental results. These include the striking mutual exclusion of the Stokes spectrum from its anti-Stokes counterpart in specific polarization configurations.