Vishwakarma, P. N. ; Subramanyam, S. V. (2007) Metal-insulator transition in boron-doped amorphous carbon films Philosophical Magazine, 87 (6). pp. 811-821. ISSN 1478-6435
Full text not available from this repository.
Official URL: http://www.tandfonline.com/doi/abs/10.1080/1478643...
Related URL: http://dx.doi.org/10.1080/14786430600993323
Abstract
Boron-doped amorphous graphite-like carbon (GLC) films have been prepared with different boron concentrations. Electrical transport measurements in the temperature range 1.3-300 K on the films shows a doping-induced metal-insulator (MI) transition. On the metallic side of the transition, the experimental data are interpreted in terms of weak localization and the effect of electron-electron interactions. Data on the insulator side of transition are analyzed in terms of hopping conduction. Critical behaviour is observed near the transition, with the resistivity obeying a power-law temperature dependence.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Taylor and Francis Group. |
| ID Code: | 51537 |
| Deposited On: | 28 Jul 2011 14:42 |
| Last Modified: | 28 Jul 2011 14:42 |
Repository Staff Only: item control page
