Metal-insulator transition in boron-doped amorphous carbon films

Vishwakarma, P. N. ; Subramanyam, S. V. (2007) Metal-insulator transition in boron-doped amorphous carbon films Philosophical Magazine, 87 (6). pp. 811-821. ISSN 1478-6435

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Official URL: http://www.tandfonline.com/doi/abs/10.1080/1478643...

Related URL: http://dx.doi.org/10.1080/14786430600993323

Abstract

Boron-doped amorphous graphite-like carbon (GLC) films have been prepared with different boron concentrations. Electrical transport measurements in the temperature range 1.3-300 K on the films shows a doping-induced metal-insulator (MI) transition. On the metallic side of the transition, the experimental data are interpreted in terms of weak localization and the effect of electron-electron interactions. Data on the insulator side of transition are analyzed in terms of hopping conduction. Critical behaviour is observed near the transition, with the resistivity obeying a power-law temperature dependence.

Item Type:Article
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Deposited On:28 Jul 2011 14:42
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