Bhattacharyya, Somnath ; Subramanyam, S. V. (1997) Metallic conductivity of amorphous carbon films under high pressure Applied Physics Letters, 71 (5). pp. 632-634. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v71/i5/p632_s...
Related URL: http://dx.doi.org/10.1063/1.120425
Abstract
Amorphous carbon films are prepared by plasma-assisted chemical vapor deposition. Resistivity of the films is measured from 300 down to 8 K showing a negative temperature coefficient of resistivity. An increase of room temperature conductivity from 102 S cm−1 to a value of about 104 S cm−1 is found at a pressure of 2 GPa. At a fixed pressure of 0.5 GPa, the films show a positive temperature coefficient of conductivity in the range from 300 to 200 K, followed by a very weak dependence of temperature down to 15 K. At a pressure of 2 GPa a positive temperature coefficient of resistivity is observed in the range between 300 and 15 K. The metallic behavior of the carbon films under high pressure is explained using electronic structure.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Metallic Thin Films; Electrical Resistivity; Electrical Conductivity; Plasma CVD Coatings; Thermoelectricity; High-pressure Effects; Electronic Structure; Carbon; Electric Conductivity; Thin Films; Amorphous State; Pressure Dependence;very High Pressure; Temperature Coefficient; Temperature Dependence |
| ID Code: | 51456 |
| Deposited On: | 28 Jul 2011 11:41 |
| Last Modified: | 28 Jul 2011 11:41 |
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