Satyalakshmi, K. M. ; Sundar Manoharan, S. ; Hegde, M. S. ; Prasad, V. ; Subramanyam, S. V. (1995) Enhanced magnetoresistance in as-deposited oxygen-deficient La0.6 Pb0.4MnO3-y thin films Journal of Applied Physics, 78 (11). pp. 6861-6863. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v78/i11/p6861...
Related URL: http://dx.doi.org/10.1063/1.360727
Abstract
The La0.6Pb0.4MnO3(LPMO) thin films were in situ deposited at different oxygen partial pressure and at a substrate temperature of 630°C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator-metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen-deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator-metal transition temperature against the 40% GMR in the case of stoichiometric thin films.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Electric Conductivity; Lanthanum Oxides; Lattice Parameters; Lead Oxides; Magnetoresistance; Manganese Oxides; Metal-insulator Transformations; Thin Films |
| ID Code: | 51430 |
| Deposited On: | 28 Jul 2011 11:40 |
| Last Modified: | 11 Jul 2012 04:23 |
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