Arole, V. M. ; Takwale, M. G. ; Ogale, S. B. ; Bhide, V. G. (1988) CW CO2 laser annealing of boron-doped polycrystalline silicon Journal of Physics D: Applied Physics, 21 (12). pp. 1761-1763. ISSN 0022-3727
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Official URL: http://iopscience.iop.org/0022-3727/21/12/016
Related URL: http://dx.doi.org/10.1088/0022-3727/21/12/016
Abstract
CW CO2 laser annealing of boron-doped polycrystalline silicon at various substrate temperature, from room temperature to 600 ° C, is reported. The overall improvement in charge carrier conduction of polycrystalline silicon is shown to occur at a substrate temperature of 200 ° C, where the maximum improvement is observed in the charge carrier mobility. These changes in the electrical properties of polycrystalline silicon are correlated with the structural modifications occurring due to laser annealing, as observed by scanning electron microscopy and x-ray diffraction. The simultaneous changes in the electrical and structural properties of polycrystalline silicon are thus carefully studied and reported.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics Publishing. |
| ID Code: | 5104 |
| Deposited On: | 18 Oct 2010 05:39 |
| Last Modified: | 19 May 2011 05:13 |
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