Characterization of as-deposited and annealed indium oxide thin films

Abstract

Indium oxide films were deposited by an electron beam evaporation technique on Corning glass substrates at various substrate temperatures ranging from 25 to 300 °C. As-deposited films appeared to be dark or semitransparent; whether they were amorphous or polycrystalline depended on the substrate temperature. In order to obtain good opto-electronic properties, these films were subjected to a heat treatment in air at various temperatures ranging from 250 to 600 °C. The In₂O₃ film prepared at 25 °C and annealed at 500 °C in air was found to be a good transparent conductor. The optical, electrical and structural properties of films deposited at various substrate temperatures and annealed at various temperatures are discussed.