Mirzapour, S. ; Rozati, S. M. ; Takwale, M. G. ; Marathe, B. R. ; Bhide, V. G. (1993) Influence of air flow rate on structural and electrical properties of undoped indium oxide thin films Materials Chemistry and Physics, 33 (3-4). pp. 204-207. ISSN 0254-0584
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/025405...
Related URL: http://dx.doi.org/10.1016/0254-0584(93)90063-R
Abstract
Using the spray pyrolysis technique thin films of indium oxide were prepared on Corning glass (7059) at a substrate temperature of 425° C at different flow rates. The electrical and structural properties of these films were studied. The Hall measurements at room temperature showed that the films prepared in an air flow rate of 7 litre min-1 have the highest mobility of 47 cm2 V-1 s-1 and a minimum resistivity of 1.125 × 10-3 Ωcm. The x-ray diffraction patterns showed that the films have a preferred orientation of [400] which peaks at the air flow rate of 7 litre min-1.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
ID Code: | 5078 |
Deposited On: | 18 Oct 2010 05:08 |
Last Modified: | 19 May 2011 05:01 |
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