Sharma, S. K. ; Jain, S. C. ; Aggarwal, S. S. ; Bhide, V. G. (1972) Structure and electrical resistivity of thin amorphous germanium films Journal of Non Crystalline Solids, 7 (3). pp. 285-294. ISSN 0022-3093
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/002230...
Related URL: http://dx.doi.org/10.1016/0022-3093(72)90029-4
Abstract
Structure and electrical resistivity of thin amorphous germanium films deposited on to a variety of substrates in a vacuum of the order of 10-5 torr has been studied extensively. The resistivity of amorphous germanium films is 102 ohm-cm at room temperature and decreases with increasing temperature. The study of the ageing phenomena immediately after the film deposition showed an increase in the resistivity at room temperature. The value of the gap in the intrinsic region has been found to vary from 0.7 eV at 300° C to 0.30 eV at 27°C. The crystallisation in amorphous films under electron irradiation has been investigated using electron microscopy and electron diffraction techniques.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 5058 |
| Deposited On: | 18 Oct 2010 05:20 |
| Last Modified: | 19 May 2011 10:40 |
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