Dusane, R. O. ; Dusane, S. R. ; Bhide, V. G. ; Kshirsagar, S. T. (1991) Effect of local structural order on the doping in hydrogenated amorphous silicon (a-Si:H) Journal of Non-Crystalline Solids, 137-138 (1). pp. 115-118. ISSN 0022-3093
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00223...
Related URL: http://dx.doi.org/10.1016/S0022-3093(05)80070-5
Abstract
Doping in a-Si:H has been studied in the light of local structural order present in these films and the consequent modification in this upon dopant incorporation. It is seen that the local structural order is a very important parameter to understand the doping mechanism and variation in this conelates well with the variation in doping efficiency with increasing dopant concentration and the increase in the defect density. Interesting results on the compensated samples are also reported and discussed.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 5044 |
| Deposited On: | 18 Oct 2010 05:23 |
| Last Modified: | 19 May 2011 05:06 |
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