Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering

Balaji, S. ; Mohan, S. ; Muthu, D. V. S. ; Sood, A. K. (2003) Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering Proceedings of the Indian Academy of Sciences - Chemical Sciences, 115 (5-6). pp. 401-410. ISSN 0253-4134

[img]
Preview
PDF - Publisher Version
608kB

Official URL: http://www.ias.ac.in/chemsci/Pdf-OctDec2003/Pc3326...

Related URL: http://dx.doi.org/10.1007/BF02708231

Abstract

Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain is relieved for film thickness greater than 4 nm.

Item Type:Article
Source:Copyright of this article belongs to Indian Academy of Sciences.
Keywords:Ion Beam Sputtering; Ultra Thin Ge Films; Interference Enhanced Raman Spectroscopy; Phonon Confinement; Atomic Force Microscopy
ID Code:50310
Deposited On:22 Jul 2011 13:52
Last Modified:18 May 2016 04:39

Repository Staff Only: item control page