Kanakaraju, S. ; Sood, A. K. ; Mohan, S. (1998) In situ Raman monitoring of ultrathin Ge films Journal of Applied Physics, 84 (10). pp. 5756-5760. ISSN 0021-8979
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Official URL: http://link.aip.org/link/japiau/v84/i10/p5756/s1
Related URL: http://dx.doi.org/10.1063/1.368866
Abstract
We report the in situ interference enhanced Raman spectroscopy of ultrathin crystalline Ge films grown at 300 °C. The Raman spectra of the films show a peak at ~ 290 cm−1 attributed to the confined optical phonon and a broadband on the low-frequency side at ~ 254 cm−1 for 5 and 10 Å thick films. The latter is attributed to disordered surface with large number of dangling bonds. For thicker films, the low-frequency mode appears at 270 cm−1 assigned to surface optical phonons.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Germanium; Elemental Semiconductors; Semiconductor Thin Films; Vacuum Deposited Coatings; Raman Spectra; Light Interference; Size Effect; Phonon Spectra; Surface Phonons; Dangling Bonds |
| ID Code: | 50288 |
| Deposited On: | 22 Jul 2011 13:50 |
| Last Modified: | 22 Jul 2011 13:50 |
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