Kamaraju, N. ; Kumar, Sunil ; Freysz, Eric ; Sood, A. K. (2010) Influence of two photon absorption induced free carriers on coherent polariton and phonon generation in ZnTe crystals Journal of Applied Physics, 107 (10). pp. 103102-103106. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v107/i10/p103...
Related URL: http://dx.doi.org/10.1063/1.3391445
Abstract
Combination of femtosecond Kerr, two photon absorption, and impulsive stimulated Raman scattering (ISRS) experiments have been carried out to investigate the effect of pulse energy and crystal temperature on the generation of coherent polaritons and phonons in < 110 > cut ZnTe single crystals of three different resistivities. We demonstrate that the effect of two photon induced free carriers on the creation of both the polaritons and phonons is largest at 4 K where the free carrier lifetime is enhanced. The temperature dependant ISRS on high and low purity ZnTe crystals allows us to unambiguously assign the phonon mode at 3.5 THz to the longitudinal acoustic mode at X-point in the Brillouin zone, LA(X).
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Brillouin Zones; Carrier Lifetime; Electro-optical Effects; High-speed Optical Techniques; II-VI Semiconductors; Optical Kerr Effect; Phonon Spectra; Polaritons; Stimulated Raman Scattering; Two-photon Processes; Wide Band Gap Semiconductors; Zinc Compounds |
| ID Code: | 50284 |
| Deposited On: | 22 Jul 2011 14:03 |
| Last Modified: | 22 Jul 2011 14:03 |
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