Raman scattering by intervalley carrier-density fluctuations in n-type Ge: uniaxial stress and resonance effects

Contreras, G. ; Sood, A. K. ; Cardona, M. (1985) Raman scattering by intervalley carrier-density fluctuations in n-type Ge: uniaxial stress and resonance effects Physical Review B: Condensed Matter and Materials Physics, 32 (2). pp. 930-933. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v32/i2/p930_1

Related URL: http://dx.doi.org/10.1103/PhysRevB.32.930

Abstract

We report the observation of light scattering by intervalley density fluctuations in n-type germanium. This scattering appears as a Lorentzian tail near the exciting laser frequency extending up to ~500 cm−1. Application of a uniaxial stress of 15 kbar along [111] results in the disappearance of this scattering, thus confirming the assignment to intervalley fluctuations. The effect has been shown to resonate near the E1 interband gap of Ge (~2.1 eV). An analysis of the dependence of the scattering on photon wavelength suggests that the effect is due mainly to intravalley diffusion and not to intervalley scattering.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:50262
Deposited On:22 Jul 2011 13:37
Last Modified:22 Jul 2011 13:37

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