Contreras, G. ; Sood, A. K. ; Cardona, M. (1985) Raman scattering by intervalley carrier-density fluctuations in n-type Si: intervalley and intravalley mechanisms Physical Review B: Condensed Matter and Materials Physics, 32 (2). pp. 924-929. ISSN 1098-0121
Full text not available from this repository.
Official URL: http://prb.aps.org/abstract/PRB/v32/i2/p924_1
Related URL: http://dx.doi.org/10.1103/PhysRevB.32.924
Abstract
We present an extensive study of Raman scattering by intervalley density fluctuations in n-type Si for a wide range of electron concentrations (8×1018<eqNe<eq1020 cm−3), temperatures (80-473 K), and laser frequencies (1.16 to 2.54 eV). The experiments were performed with a Raman (ω>20 cm−1) and a Fabry-Perot "Brillouin" spectrometer (ω<20 cm−1). The results indicate that both nonlocal intravalley diffusion and local intervalley scattering contribute to the light scattering. The measured scattering efficiencies can be quantitatively interpreted without recourse to adjustable parameters. Failure to observe the scattering in ion-implanted laser-annealed samples is also discussed.
Item Type: | Article |
---|---|
Source: | Copyright of this article belongs to American Physical Society. |
ID Code: | 50261 |
Deposited On: | 22 Jul 2011 13:37 |
Last Modified: | 22 Jul 2011 13:37 |
Repository Staff Only: item control page