Contreras, G. ; Sood, A. K. ; Cardona, M. ; Compaan, A. (1984) Effect of free carriers on the Raman frequency of ultraheavily doped n-Si Solid State Communications, 49 (4). pp. 303-305. ISSN 0038-1098
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0038-1098(84)90574-X
Abstract
The Raman phonon frequency of Si heavily doped with P, As, and Sb by means of ion implantation and laser annealing (IILA) has been measured. This frequency decreases with increasing doping. The experimental results are interpreted in terms of the calculated self energy for phonons interacting with free electrons.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 50227 |
| Deposited On: | 22 Jul 2011 13:36 |
| Last Modified: | 22 Jul 2011 13:36 |
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