Krishna Murthy, G. S. R. ; Sinha, A. P. B. (1979) Theoretical study on the behaviour of metal-p-n-Si Schottky barrier solar cell Pramana - Journal of Physics, 13 (1). pp. 39-45. ISSN 0304-4289
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Official URL: http://www.ias.ac.in/j_archive/pramana/13/1/39-45/...
Related URL: http://dx.doi.org/10.1007/BF02846126
Abstract
The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically following Li's work on GaAs. The behaviour of the barrier height as a function of carrier densities in then andp regions and thep layer thickness is investigated. The photovoltaic cell characteristics are worked out and conditions for maximum efficiency obtained.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Indian Academy of Sciences. |
| Keywords: | Schottky Diode; Silicon; Solar Cell |
| ID Code: | 48984 |
| Deposited On: | 18 Jul 2011 09:54 |
| Last Modified: | 18 May 2016 03:53 |
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