Badrinarayanan, S. ; Mandale, A. B. ; Gunjikar, V. G. ; Sinha, A. P. B. (1986) Mechanism of high-temperature oxidation of tin selenide Journal of Materials Science, 21 (9). pp. 3333-3338. ISSN 0022-2461
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Official URL: http://www.springerlink.com/content/m5323t5565w067...
Related URL: http://dx.doi.org/10.1007/BF00553376
Abstract
High-temperature oxidation of SnSe in the temperature interval 25 to 650° C has been studied by X-ray photoelectron spectroscopy, X-ray diffraction and thermal analysis techniques. Exposure to dry oxygen (760 torr pressure) at up to 200° C leads to the formation of SnO2 on the surface. The high-temperature bulk oxidation between 250 and 650° C goes through distinct steps of formation of intermediate tin oxoselenides, presumably SnOSe or SnSeO2 and its subsequent conversion to SnO2.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Springer. |
| ID Code: | 48975 |
| Deposited On: | 18 Jul 2011 09:57 |
| Last Modified: | 18 Jul 2011 09:57 |
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