Sharma, Satinder K. ; Rammohan, Amritha ; Sharma, Ashutosh (2010) Templated one step electrodeposition of high aspect ratio n-type ZnO nanowire arrays Journal of Colloid and Interface Science, 344 (1). pp. 1-9. ISSN 0021-9797
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.jcis.2009.12.026
Abstract
High aspect ratio Zinc Oxide (ZnO) nanowires (NWs) were synthesized by template based one-step electrochemical deposition (OSECD) technique. The electro-reduction of hydroxide ions in the presence of Zn2+ ions within Zn(NO3)2 is involved in the growth of ultra thin NWs arrays. Field Emission Scanning Electron Microscopy (FESEM) images revealed that the growth rates of different crystal faces, (00001) and , were different at different deposition potential for the high aspect ratios ZnO NWs arrays. The n-type semiconductor conductivity of ZnO NWs was ascertained by a Hot-Probe approach. X-ray diffraction results demonstrated that the grown ZnO NWs had wurtzite crystal structure with unit cell parameters a=2.93 Å, c=5.45 Å and a deterioration of preferred (1 0 1) orientation is observed at more negative deposition potentials. Small angle X-ray scattering (SAXS) results evidenced that the NW arrays grown at −1.2 V have higher fraction of larger crystallites. Micro-Raman spectroscopy analysis showed that the variation in E2 (high) vibration mode at 435 cm −1 is coupled with an increase in electro acceptor oxygen atoms incorporated within ZnO NWs at −1.2 V.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
Keywords: | ZnO Nanowire; Aligned Nanowire; Electrochemical Synthesis; Templated Synthesis; Nanowire Growth Kinetics; N-type Nanowire; Hot-probe; Nanowire Characterization; μ-raman |
ID Code: | 47003 |
Deposited On: | 06 Jul 2011 11:11 |
Last Modified: | 06 Jul 2011 11:11 |
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