Mandal, N. P. ; Sharma, Ashutosh ; Agarwal, S. C. (2004) Arresting photodegradation of porous silicon by a polymer coating Solid State Communications, 129 (3). pp. 183-186. ISSN 0038-1098
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.ssc.2003.09.030
Abstract
Light soaking in air rapidly decreases photoluminescence (PL) of porous silicon (PS) and increases electron spin resonance (ESR) signal. In vacuum, a short light exposure (<2700 s) increases PL and decreases ESR, but longer exposures again degrade the PL. We could arrest the light-induced degradation over long periods by applying a thin polymer coating, which resulted in constant PL and ESR intensities. The PL intensity of coated PS is comparable to the PL intensity of a fresh PS sample in air. FTIR spectrum suggests new bond formations at the PS/polymer interface that may be responsible for PL stability.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Nanostructures; A. Semiconductors; E. Luminescence |
| ID Code: | 46917 |
| Deposited On: | 06 Jul 2011 10:56 |
| Last Modified: | 06 Jul 2011 10:56 |
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