Maiti, K. ; Vasanthacharya, N. Y. ; Sarma, D. D. (1997) Doping dependence of transport and magnetic properties in La1−xCaxVO3 Journal of Physics: Condensed Matter, 9 (35). pp. 7507-7514. ISSN 0953-8984
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Official URL: http://iopscience.iop.org/0953-8984/9/35/024
Related URL: http://dx.doi.org/10.1088/0953-8984/9/35/024
Abstract
We report temperature dependences of transport and magnetic properties of La1−xCaxVO3 controlled by charge carrier doping (x = 0.0 - 0.5). The system exhibits an insulator-to-metal transition concomitant with an antiferromagnetic-to-paramagnetic transition near x=0.2 with increasing substitution. Disorder effects are found to influence the low-temperature transport properties of both insulating and metallic compositions near the critical concentration. At higher temperature resistivity of the metallic compositions has a T2 dependence close to the critical concentration (x=0.2 and 0.3) and thus provides an example of disordered Fermi liquid behaviour near the Mott transition. In contrast, at larger doping (x=0.4 and 0.5) the resistivity exhibits a T1.5 dependence. The molar susceptibility for the metallic samples indicates substantial enhancements due to electron correlation.
Item Type: | Article |
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Source: | Copyright of this article belongs to Institute of Physics. |
ID Code: | 46366 |
Deposited On: | 04 Jul 2011 11:52 |
Last Modified: | 17 Jul 2012 16:10 |
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